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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK260N17T IXFX260N17T
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
170V 260A 6.5m 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C
Maximum Ratings 170 170 20 30 260 160 700 100 3 1670 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 170 2.5 5.0 200 V V nA
Applications Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 5 mA 6.5 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100136(03/09)
IXFK260N17T IXFX260N17T
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 105 170 24 2870 450 54 40 90 40 400 108 116 0.09 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 130A, -di/dt = 100A/s VR = 75V, VGS = 0V 0.56 9.00 Characteristic Values Min. Typ. Max. 260 1040 1.3 200 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK260N17T IXFX260N17T
Fig. 1. Output Characteristics @ 25C
260 240 220 200 180 250 6V 7V VGS = 10V 8V 7V 350 300 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0
ID - Amperes
200 150 100
6V
5V
50 0
5V
1.2
1.4
1.6
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 150C
260 240 220 200 180 6V VGS = 10V 8V 7V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 260A I D = 130A
ID - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 5V
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current
3.4 VGS = 10V 3.0 140 180 160
Fig. 6. Maximum Drain Current vs. Case Temperature
External Lead Current Limit
RDS(on) - Normalized
2.6 2.2 1.8 1.4
TJ = 175C
ID - Amperes
TJ = 25C
120 100 80 60 40 20 0
1.0 0.6 0 50 100 150 200 250 300 350
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_260N17T(9E)3-23-09
IXFK260N17T IXFX260N17T
Fig. 7. Input Admittance
200 180 160 140 TJ = 150C 25C - 40C 300 275 250 225 TJ = - 40C
Fig. 8. Transconductance
120 100 80 60 40 20 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
g f s - Siemens
ID - Amperes
200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120
25C
125C
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 85V I D = 130A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C
200 150 100 50
6 5 4 3 2 1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 0 50 100 150 200 250 300 350 400 450
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
Ciss RDS(on) Limit 25s 10,000 Coss
Capacitance - PicoFarads
ID - Amperes
100 100s
1,000 TJ = 175C Crss 100 0 5 10 15 20 25 30 35 40 10 1 10 100 1000 TC = 25C Single Pulse 1ms
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK260N17T IXFX260N17T
Fig. 13. Maximum Transient Thermal Impedance
0.100
Z (th )J C - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_260N17T(9E)3-26-09

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